| PART |
Description |
Maker |
| AFT05MP075GNR1 AFT05MP075NR1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| MRFE6VP61K25HR6 MRFE6VP61K25HSR6 |
RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode
|
Freescale Semiconductor, Inc
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL90N10F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STL8N6LF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| STL120N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STD45P4LLF6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R460CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| IPD60R800CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPL60R210P6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
